ultra wide bandgap semiconductor materials

Ultra Wide Bandgap Semiconductor Materials
Author: Meiyong Liao
Publisher: Elsevier
Release Date: 2019-06-18
Pages: 503
ISBN:
Available Language: English, Spanish, And French
EBOOK SYNOPSIS:

Ultra-wide Bandgap Semiconductors (UWBG) covers the most recent progress in UWBG materials, including sections on high-Al-content AlGaN, diamond, B-Ga2O3, and boron nitrides. The coverage of these materials is comprehensive, addressing materials growth, physics properties, doping, device design, fabrication and performance. The most relevant and important applications are covered, including power electronics, RF electronics and DUV optoelectronics. There is also a chapter on novel structures based on UWBG, such as the heterojunctions, the low-dimensional structures, and their devices. This book is ideal for materials scientists and engineers in academia and R&D searching for materials superior to silicon carbide and gallium nitride. Provides a one-stop resource on the most promising ultra-wide bandgap semiconducting materials, including high-Al-content AlGaN, diamond, β-Ga2O3, boron nitrides, and low-dimensional materials Presents comprehensive coverage, from materials growth and properties, to device design, fabrication and performance Features the most relevant applications, including power electronics, RF electronics and DUV optoelectronics

Ultrawide Bandgap Semiconductors
Author:
Publisher: Academic Press
Release Date: 2020-10-01
Pages: 422
ISBN:
Available Language: English, Spanish, And French
EBOOK SYNOPSIS:

Ultrawide Bandgap Semiconductors, Volume 104 in the Semiconductors and Semimetals series, highlights new advances in the field, with this new volume presenting interesting chapters. Each chapter is written by an international board of authors who examine such topics as Gallium oxide power devices, Advanced concepts in Ga2O3 power and RF devices, Material epitaxy, doping, and transport properties of (Al,Ga)2O3 alloys and heterostructures, Thermal science and engineering of Ga2O3 materials and devices, Controlling different phases of gallium oxide for solar blind photodetector and power electronics applications, Nanoscale AlGaN and BN: epitaxy, properties and device application, High-Al content AlGaN heterostructures and devices. Provides the authority and expertise of leading contributors from an international board of authors Presents the latest release in the Semiconductors and Semimetals series Updated release includes the latest information on Ultrawide Bandgap Semiconductors

Wide Bandgap Semiconductor Based Electronics
Author: Pearton REN
Publisher: IOP Publishing Limited
Release Date: 2020-09-30
Pages: 450
ISBN:
Available Language: English, Spanish, And French
EBOOK SYNOPSIS:

This reference text provides comprehensive coverage of the challenges and latest research in wide and ultra-wide bandgap semiconductors. Leading researchers provide reviews on the latest development of materials and devices in these systems.

Nitride Wide Bandgap Semiconductor Material And Electronic Devices
Author: Yue Hao
Publisher: CRC Press
Release Date: 2016-11-03
Pages: 368
ISBN:
Available Language: English, Spanish, And French
EBOOK SYNOPSIS:

This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.

Wide Bandgap Semiconductor Materials And Devices 20
Author: S. Jang
Publisher: The Electrochemical Society
Release Date: 2019-05-17
Pages: 53
ISBN:
Available Language: English, Spanish, And French
EBOOK SYNOPSIS:

This issue of ECS Transactions includes papers based on presentations from the symposium "Wide Bandgap Semiconductor Materials and Devices 20," originally held at the 235th ECS Meeting in Dallas, Texas, May 26-30, 2019.

Wide Bandgap Semiconductor Materials And Devices 19
Author: J. Hite
Publisher: The Electrochemical Society
Release Date: 2018-05-04
Pages: 130
ISBN:
Available Language: English, Spanish, And French
EBOOK SYNOPSIS:

Wide Bandgap Semiconductor Materials And Devices 12
Author: J. A. Bardwell
Publisher: The Electrochemical Society
Release Date: 2011-04
Pages: 210
ISBN:
Available Language: English, Spanish, And French
EBOOK SYNOPSIS:

This issue of ECS Transactions focuses on issues pertinent to development of wide-bandgap semiconductor materials and devices, encompassing inorganic wide-bandgap semiconductors: III-nitrides (e. g. gallium nitride), II-oxides, SiC, diamond, II-VI, and also emerging materials such as organic-inorganic nanoscale structures.

Nonlinear Optics In Photonic Ultrawide Bandgap Circuits
Author: Michael Larry Fanto
Publisher:
Release Date: 2020
Pages: 100
ISBN:
Available Language: English, Spanish, And French
EBOOK SYNOPSIS:

"Ultrawide-bandgap semiconductors have an important role for many applications ranging from power electronics to photonics. The semiconductor material with the largest bandgap is aluminum nitride with a maximum bandgap of 6.28 eV, corresponding to a wavelength transparency extending to 197 nm. The large transparency window makes aluminum nitride a promising optical material for applications that span from the infrared to ultraviolet. Along with these properties, aluminum nitride is a non-centrosymmetric crystal allowing exploitation of the second order nonlinearity and the electro-optic effect. This thesis will cover the synthesis of the material, a number of characterization techniques that verify the quality of the material, and conclude with applications for the synthesized material. To date we have demonstrated an ultrawide-bandgap semiconductor photonics platform based on nanocrystalline aluminum nitride (AlN) on sapphire. This photonics platform guides light at low loss from the ultraviolet (UV) to the visible spectrum, though is transparent from 200 -15,000 nm. We measured ring resonators with intrinsic quality factor (Q) exceeding 170,000 at 638 nm and Q >20,000 down to 369.5 nm, which shows a promising path for low-loss integrated photonics in UV and visible spectrum. The nonlinear, electro-optic, and piezo-electric properties of AlN make it a promising active material for controlling and connecting atomic and atom-like quantum memories, coherent qubit transduction, entangled photon generation, and frequency conversion."--Abstract.

Processing Of  Wide Band Gap Semiconductors
Author: S. J. Pearton
Publisher: Cambridge University Press
Release Date: 2013-01-15
Pages: 591
ISBN:
Available Language: English, Spanish, And French
EBOOK SYNOPSIS:

Wide bandgap semiconductors, made from such materials as GaN, SiC, diamond, and ZnSe, are undergoing a strong resurgence in recent years, principally because of their direct bandgaps, which give them a huge advantage over the indirect gap Sic As an example, more than 10 million blue LEDs using this technology are sold each month, and new, high brightness (15 lumens per watt), long-life white LEDs are under development with the potential to replace incandescent bulbs in many situations. This book provides readers with a broad overview of this rapidly expanding technology, bringing them up to speed on new discoveries and commercial applications. It provides specific technical applications of key processes such as laser diodes, LEDs, and very high temperature electronic controls on engines, focusing on doping, etching, oxidation passivation, growth techniques and more.

Processing Of  Wide Band Gap Semiconductors
Author: Stephen J. Pearton
Publisher: Elsevier
Release Date: 2000-06-01
Pages: 591
ISBN:
Available Language: English, Spanish, And French
EBOOK SYNOPSIS:

Wide bandgap semiconductors, made from such materials as GaN, SiC, diamond, and ZnSe, are undergoing a strong resurgence in recent years, principally because of their direct bandgaps, which give them a huge advantage over the indirect gap Sic As an example, more than 10 million blue LEDs using this technology are sold each month, and new, high brightness (15 lumens per watt), long-life white LEDs are under development with the potential to replace incandescent bulbs in many situations. This book provides readers with a broad overview of this rapidly expanding technology, bringing them up to speed on new discoveries and commercial applications. It provides specific technical applications of key processes such as laser diodes, LEDs, and very high temperature electronic controls on engines, focusing on doping, etching, oxidation passivation, growth techniques and more.

Proceedings Of The Symposium On Wide Bandgap Semiconductors And Devices And The Twenty Third State Of The Art Program On Compound Semiconductors  SOTAPOCS XXIII
Author: F. Ren
Publisher: The Electrochemical Society
Release Date: 1995
Pages: 510
ISBN:
Available Language: English, Spanish, And French
EBOOK SYNOPSIS:

State Of The Art Program On Compound Semiconductorss 47  SOTAPOCS 47  And Wide Bandgap Semiconductor Materials And Devices 8
Author: J. Wang
Publisher: The Electrochemical Society
Release Date: 2007-01-01
Pages: 286
ISBN:
Available Language: English, Spanish, And French
EBOOK SYNOPSIS:

This issue contains the proceedings of both invited and contributed talks at the 47th State-Of-The-Art Programs on Compound Semiconductors (SOTAPOCS) symposium, and of the 8th Symposium on Wide Bandgap Semiconductors and Devices. The topics in this issue include some of the latest progress in compound and wide bandgap semiconductor development in fabrication processes, materials, characterization, devices, and reliability.

Wide Energy Bandgap Electronic Devices
Author: Fan Ren
Publisher: World Scientific
Release Date: 2003-07-14
Pages: 528
ISBN:
Available Language: English, Spanish, And French
EBOOK SYNOPSIS:

This book provides a summary of the current state-of-the-art in SiC and GaN and identify future areas of development. The remarkable improvements in material quality and device performance in the last few years show the promise of these technologies for areas that Si cannot operate because of it's smaller bandgap. We feel that this collection of chapters provides an excellent introduction to the field and is an outstanding reference for those performing research on wide bandgap semiconductors. In this book, we bring together numerous experts in the field to review progress in SiC and GaN electronic devices and novel detectors. Professor Morkoc reviews the growth and characterization of nitrides, followed by chapters from Professor Shur, Professor Karmalkar, and Professor Gaska on High Electron Mobility Transistors, Professor Pearton and co-workers on ultra-high breakdown voltage GaN-based rectifiers and the group of Professor Abernathy on emerging MOS devices in the nitride system. Dr Baca from Sandia National Laboratories and Dr Chang from Agilent review the use of mixed group V-nitrides as the base layer in novel Heterojunction Bipolar Transistors. There are 3 chapters on SiC, including Professor Skowronski on growth and characterization, Professor Chow on power Schottky and pin rectifiers and Professor Cooper on power MOSFETs. Professor Dupuis and Professor Campbell give an overview of short wavelength, nitride based detectors. Finally, Jihyun Kim and co-workers describe recent progress in wide bandgap semiconductor spintronics where one can obtain room temperature ferromagnetism and exploit the spin of the electron in addition to its charge. Contents:Growth of III-Nitride Semiconductors and Their Characterization (H Morkoç et al.)GaN and AlGaN High Voltage Power Rectifiers (A-P Zhang et al.)GaN-Based Power High Electron Mobility Transistors (S Karmalkar et al.)Fabrication and Performance of GaN MOSFETs and MOSHFETs (C R Abernathy & B P Gila)SiC Materials Growth and Characterization (M Skowronski)High Voltage SiC Power Rectifiers (T P Chow)Silicon Carbide MOSFETs (J A Cooper, Jr.)InGaAsN-Based HBTs (A G Baca & P C Chang)Ultraviolet Photodetectors Based Upon III-N Materials (R D Dupuis & J C Campbell)Dilute Magnetic GaN, SiC and Related Semiconductors (J Kim et al.) Readership:Researchers, professors and graduate students in the field of wide bandgap semiconductors. Keywords:Wide Bandgap;Electronic Devices;GaN;SiC;HBT Ultraviolet Photodetectors

Molecular Beam Epitaxy Growth And Characterization Of ZnO Based Layers And Heterostructures
Author: Abdelhamid Abdelrehim Mahmoud Elshaer
Publisher: Cuvillier Verlag
Release Date: 2008
Pages: 138
ISBN:
Available Language: English, Spanish, And French
EBOOK SYNOPSIS:

Gallium Oxide
Author: Masataka Higashiwaki
Publisher: Springer Nature
Release Date: 2020-04-23
Pages: 764
ISBN:
Available Language: English, Spanish, And French
EBOOK SYNOPSIS:

This book provides comprehensive coverage of the new wide-bandgap semiconductor gallium oxide (Ga2O3). Ga2O3 has been attracting much attention due to its excellent materials properties. It features an extremely large bandgap of greater than 4.5 eV and availability of large-size, high-quality native substrates produced from melt-grown bulk single crystals. Ga2O3 is thus a rising star among ultra-wide-bandgap semiconductors and represents a key emerging research field for the worldwide semiconductor community. Expert chapters cover physical properties, synthesis, and state-of-the-art applications, including materials properties, growth techniques of melt-grown bulk single crystals and epitaxial thin films, and many types of devices. The book is an essential resource for academic and industry readers who have an interest in, or plan to start, a new R&D project related to Ga2O3.

State Of The Art Program On Compound Semiconductors 51  SOTAPOCS 51  And Wide Bandgap Semiconductor Materials And Devices 10
Author: E. Stokes
Publisher: The Electrochemical Society
Release Date: 2009-09
Pages: 130
ISBN:
Available Language: English, Spanish, And French
EBOOK SYNOPSIS:

The papers included in this issue of ECS Transactions were originally presented in the joint symposium ¿State-of-the-Art Program on Compound Semiconductors 51 (SOTAPOCS 51) and Wide-Bandgap Semiconductor Materials and Devices 10¿, held during the 216th meeting of The Electrochemical Society, in Vienna, Austria from October 4 to 9, 2009.

Wide Bandgap Semiconductors
Author: Kiyoshi Takahashi
Publisher: Springer Science & Business Media
Release Date: 2007-04-12
Pages: 460
ISBN:
Available Language: English, Spanish, And French
EBOOK SYNOPSIS:

This book offers a comprehensive overview of the development, current state, and future prospects of wide bandgap semiconductor materials and related optoelectronics devices. With 901 references, 333 figures and 21 tables, this book will serve as a one-stop source of knowledge on wide bandgap semiconductors and related optoelectronics devices.

State Of The Art Program On Compound Semiconductors 46  SOTAPOCS 46   And  Processes At The Semiconductor Solution Interface 2
Author: C. O'Dwyer
Publisher: The Electrochemical Society
Release Date: 2007-01-01
Pages: 631
ISBN:
Available Language: English, Spanish, And French
EBOOK SYNOPSIS:

Section 1 addresses the most recent developments in processes at the semiconductor-solution interface include etching, oxidation, passivation, film growth, porous semiconductor formation, electrochemical, photoelectrochemical, electroluminescence and photoluminescence processes, electroanalytical measurements and related topics on both elemental and compound semiconductors. Section 2 addresses the most recent developments in compound semiconductors encompassing advanced devices, materials growth, characterization, processing, device fabrication, reliability, and related topics.

State Of The Art Program On Compound Semiconductors 45  SOTAPOCS 45   And  Wide Bandgap Semiconductor Materials And Devices 7
Author: F. Ren
Publisher: The Electrochemical Society
Release Date: 2006-01-01
Pages: 479
ISBN:
Available Language: English, Spanish, And French
EBOOK SYNOPSIS:

This volume contains papers from two symposia: State of the Art Program on Compound Semiconductors 45 and Wide Bandgap Semiconductor Materials and Devices VII.

Chemical Oxidation
Author: John A. Roth
Publisher: CRC Press
Release Date: 1996-09-11
Pages: 255
ISBN:
Available Language: English, Spanish, And French
EBOOK SYNOPSIS:

This book contains technical papers, presented at the Fourth International Symposium on Chemical Oxidation: Technology for the Nineties held in Tennessee in 1984, on theory, design, and practices of chemical oxidation processes applied to environmental problems.